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Atomic layer deposition of TiO 2 and Al‐doped TiO 2 films on Ir substrates for ultralow leakage currents
Author(s) -
Kim Seong Keun,
Han Sora,
Han Jeong Hwan,
Lee Woongkyu,
Hwang Cheol Seong
Publication year - 2011
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201105250
Subject(s) - rutile , atomic layer deposition , anatase , doping , materials science , thin film , leakage (economics) , dielectric , layer (electronics) , deposition (geology) , oxygen , chemical engineering , analytical chemistry (journal) , nanotechnology , chemistry , optoelectronics , photocatalysis , catalysis , organic chemistry , paleontology , sediment , engineering , economics , macroeconomics , biology
TiO 2 and Al‐doped TiO 2 (ATO) films were grown on Ir substrates by atomic layer deposition using O 3 as the oxygen source. With increasing O 3 feeding time, the crystalline structure of the TiO 2 films was transformed from anatase to rutile. Above an O 3 feeding time of 35 s, the films crystallized as only rutile due to the formation of IrO 2 layer at the interface. The TiO 2 and ATO films showed higher dielectric constants of 78 and 51, respectively. The films on Ir showed superior leakage properties compared to the films on Ru due to the high work‐function of Ir. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)