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A deep level transient spectroscopy study on the interface states across grain boundaries in multicrystalline silicon
Author(s) -
Chen J.,
Cornagliotti E.,
Simoen E.,
Hieckmann E.,
Weber J.,
Poortmans J.
Publication year - 2011
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201105225
Subject(s) - deep level transient spectroscopy , grain boundary , recombination , silicon , materials science , getter , spectroscopy , transient (computer programming) , solar cell , optoelectronics , chemistry , metallurgy , physics , biochemistry , microstructure , quantum mechanics , computer science , gene , operating system
Degrading the recombination activities of grain boundaries (GBs) is essential to improve the efficiency of multi‐crystalline silicon (mc‐Si) based solar cells. We apply the deep level transient spectroscopy technique to detect interface states at Σ3 and Σ9 GBs in mc‐Si. The density of interface states close to midgap is found comparable for both as‐grown GBs. Gettering or hydrogenation leads to shallower states with a smaller capture cross section and lower density. Recombination activity reduction for Σ3 GBs is stronger than for Σ9 GBs especially after hydrogenation. Both the analysis approach and experimental results could be applied for a specific GB engineering of mc‐Si based solar cells. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)