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Surface photovoltage within a monolayer of CdSe quantum dots
Author(s) -
Zillner Elisabeth,
Dittrich Thomas
Publication year - 2011
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201105174
Subject(s) - quantum dot , monolayer , surface photovoltage , electron , materials science , auger effect , optoelectronics , layer (electronics) , auger , chemistry , analytical chemistry (journal) , nanotechnology , atomic physics , spectroscopy , physics , quantum mechanics , chromatography
Layers of pyridine terminated CdSe quantum dots (QDs) with thicknesses from a monolayer (ML) to 80 nm were deposited on ITO substrates by dip coating. Transient surface photovoltage measurements showed dominant charge separation within the first ML of QDs at short times and an increasing influence of layer thickness at long times. Auger recombination limited the maximum of separated charge carriers to about 1 × 10 12 cm ‐2 .Separation of photo‐generated electron‐hole pairs within a ML of CdSe‐QDs. Electrons were either trapped on ITO surface states or separated due to a built‐in electrical field created by a transferred electron from the ITO to a trap state at the QD. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)