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X‐ray detectors based on Fe doped GaN photoconductors
Author(s) -
Fu Kai,
Yu Guohao,
Yao Changsheng,
Wang Guo,
Lu Min,
Zhang Guoguang
Publication year - 2011
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201105163
Subject(s) - photocurrent , doping , dark current , quenching (fluorescence) , optoelectronics , detector , materials science , biasing , anode , transient (computer programming) , physics , voltage , photodetector , optics , electrode , computer science , fluorescence , quantum mechanics , operating system
Abstract X‐ray detectors based on Fe doped GaN photoconductors have been fabricated. The dark current I d and photocurrent I p as a function of bias have been investigated and a large I p / I d ratio of 180 at 200 V has been obtained in spite of optical quenching. The physical mechanism of the transient per‐ formance of the photoconductor has been studied through fitting the experimental data. The functions of photocurrent versus acceleration voltage and current of the X‐ray source have been measured and discussed. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)