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Threshold voltage control by gate electrode in Ga–Sn–Zn–O thin‐film transistors for logic inverter application
Author(s) -
Lee Hee Sung,
Park Chan Ho,
Lee Kwang H.,
Kim DongHo,
Kim HyeRi,
Lee GunHwan,
Im Seongil
Publication year - 2011
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201105158
Subject(s) - inverter , thin film transistor , materials science , optoelectronics , electrode , transistor , voltage , fabrication , logic gate , electrical engineering , threshold voltage , non blocking i/o , nanotechnology , layer (electronics) , chemistry , engineering , medicine , alternative medicine , pathology , biochemistry , catalysis
We report on the fabrication of Ga–Sn–Zn–O thin‐film transistors (GTZO‐TFTs) and their inverter application. For the most stable and highly‐performing GTZO‐TFT, an optimal oxygen pressure condition was extracted out during co‐sputter deposition of Ga‐doped ZnO and SnO 2 . Using the oxygen pressure condition, we fabricated top‐gate GTZO‐TFTs for a logic inverter, which has two serially‐connected top‐gate TFTs with different gate electrodes: conducting NiO x and Al. Since the electrodes have very different work functions controlling the threshold voltages of TFTs, our inverter demonstrated a nice operation at less than 5 V with a high voltage gain of over 25. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)