Effect of oxygen content during sputtering on the electrical properties of bismuth ferrite thin films | Zendy

Wu Jiagang | Zendy; Wang John | Zendy; Xiao Dingquan | Zendy; Zhu Jianguo | Zendy

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Effect of oxygen content during sputtering on the electrical properties of bismuth ferrite thin films

Author(s) -

Wu Jiagang,

Wang John,

Xiao Dingquan,

Zhu Jianguo

Publication year - 2011

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.201105129

Subject(s) - sputtering , materials science , bismuth ferrite , ferroelectricity , thin film , oxygen , analytical chemistry (journal) , optoelectronics , nanotechnology , chemistry , multiferroics , dielectric , organic chemistry , chromatography

The effect of oxygen content during sputtering on the leakage mechanism and the ferroelectric properties of BiFeO 3 with a sintering aid of CuO (CuO‐BFO) was investigated, where all thin films with (100) orientation were grown on SrRuO 3 /LaAlO 3 (100) substrates by radio frequency sputtering with an oxygen content of 0–40%. The ferroelectric properties in CuO‐BFO are tailored by changing the oxygen content during sputtering, indicating a small growth window. The Schottky emission dominates the leakage behavior regardless of oxygen content. The thin film with an oxygen content of ∼20% during sputtering has a higher remanent polarization of 2 P r ∼ 184.7 μC/cm 2 , due to its lower leakage current density and an improved phase purity. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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