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Efficient interdigitated back‐contacted silicon heterojunction solar cells
Author(s) -
Mingirulli Nicola,
Haschke Jan,
Gogolin Ralf,
Ferré Rafel,
Schulze Tim F.,
Düsterhöft J.,
Harder NilsPeter,
Korte Lars,
Brendel Rolf,
Rech Bernd
Publication year - 2011
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201105056
Subject(s) - common emitter , heterojunction , crystalline silicon , amorphous silicon , materials science , silicon , layer (electronics) , optoelectronics , amorphous solid , solar cell , polymer solar cell , nanotechnology , chemistry , crystallography
We present back‐contacted amorphous/crystalline silicon heterojunction solar cells (IBC‐SHJ) on n‐type substrates with fill factors exceeding 78% and high current densities, the latter enabled by a SiN x /SiO 2 passivated phosphorus‐diffused front surface field. V oc calculations based on carrier lifetime data of reference samples indicate that for the IBC architecture and the given amorphous silicon layer qualities an emitter buffer layer is crucial to reach a high V oc , as known for both‐side contacted silicon heterojunction solar cells. A back surface field buffer layer has a minor influence. We observe a boost in solar cell V oc of 40 mV and a simultaneous fill factor reduction introducing the buffer layer. The aperture‐area efficiency increases from 19.8 ± 0.4% to 20.2 ± 0.4%. Both, efficiencies and fill factors constitute a significant improvement over previously reported values. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)