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19.4%‐efficient large‐area fully screen‐printed silicon solar cells
Author(s) -
Gatz Sebastian,
Hannebauer Helge,
Hesse Rene,
Werner Florian,
Schmidt Arne,
Dullweber Thorsten,
Schmidt Jan,
Bothe Karsten,
Brendel Rolf
Publication year - 2011
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201105045
Subject(s) - materials science , wafer , passivation , stack (abstract data type) , silicon nitride , silicon , optoelectronics , dielectric , solar cell , common emitter , silicon dioxide , screen printing , energy conversion efficiency , layer (electronics) , nanotechnology , composite material , computer science , programming language
We demonstrate industrially feasible large‐area solar cells with passivated homogeneous emitter and rear achieving energy conversion efficiencies of up to 19.4% on 125 × 125 mm 2 p‐type 2–3 Ω cm boron‐doped Czochralski silicon wafers. Front and rear metal contacts are fabricated by screen‐printing of silver and aluminum paste and firing in a conventional belt furnace. We implement two different dielectric rear surface passivation stacks: (i) a thermally grown silicon dioxide/silicon nitride stack and (ii) an atomic‐layer‐deposited aluminum oxide/silicon nitride stack. The dielectrics at the rear result in a decreased surface recombination velocity of S rear = 70 cm/s and 80 cm/s, and an increased internal IR reflectance of up to 91% corresponding to an improved J sc of up to 38.9 mA/cm 2 and V oc of up to 664 mV. We observe an increase in cell efficiency of 0.8% absolute for the cells compared to 18.6% efficient reference solar cells featuring a full‐area aluminum back surface field. To our knowledge, the energy conversion efficiency of 19.4% is the best value reported so far for large area screen‐printed solar cells. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)