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Demonstration of diamond field effect transistors by AlN/diamond heterostructure
Author(s) -
Imura Masataka,
Hayakawa Ryoma,
Watanabe Eiichiro,
Liao Meiyong,
Koide Yasuo,
Amano Hiroshi
Publication year - 2011
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201105024
Subject(s) - diamond , heterojunction , materials science , optoelectronics , epitaxy , transistor , field effect transistor , nanotechnology , layer (electronics) , voltage , electrical engineering , composite material , engineering
This is the first report on an AlN/diamond heterojunction field effect transistor (HFET). The AlN epilayer is grown on oxygen‐terminated (111) diamond substrates using metalorganic vapor phase epitaxy at a temperature as high as 1240 °C. The transistor and gate capacitance–voltage characteristics indicate that the HFET behaves as a p‐channel FET with a normally‐on depletion mode. The HFET channel is located at the AlN/diamond interface, and holes are accumulated in diamond close to the interface. The development of the AlN/diamond HFET creates a new possibility for diamond‐based power electronics. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)