Demonstration of diamond field effect transistors by AlN/diamond heterostructure | Zendy

Imura Masataka | Zendy; Hayakawa Ryoma | Zendy; Watanabe Eiichiro | Zendy; Liao Meiyong | Zendy; Koide Yasuo | Zendy; Amano Hiroshi | Zendy

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Demonstration of diamond field effect transistors by AlN/diamond heterostructure

Author(s) -

Imura Masataka,

Hayakawa Ryoma,

Watanabe Eiichiro,

Liao Meiyong,

Koide Yasuo,

Amano Hiroshi

Publication year - 2011

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.201105024

Subject(s) - diamond , heterojunction , materials science , optoelectronics , epitaxy , transistor , field effect transistor , nanotechnology , layer (electronics) , voltage , electrical engineering , composite material , engineering

This is the first report on an AlN/diamond heterojunction field effect transistor (HFET). The AlN epilayer is grown on oxygen‐terminated (111) diamond substrates using metalorganic vapor phase epitaxy at a temperature as high as 1240 °C. The transistor and gate capacitance–voltage characteristics indicate that the HFET behaves as a p‐channel FET with a normally‐on depletion mode. The HFET channel is located at the AlN/diamond interface, and holes are accumulated in diamond close to the interface. The development of the AlN/diamond HFET creates a new possibility for diamond‐based power electronics. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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