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Back Cover: Phys. Status Solidi RRL 5–6/2010
Publication year - 2010
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201090006
Subject(s) - cover (algebra) , computer science , electrical engineering , citation , magnetoresistive random access memory , engineering physics , physics , computer hardware , engineering , mechanical engineering , library science , random access memory
In their Rapid Research Letter on p. 106, C. W. Nan and co‐workers present the concept of magnetic tunnel junction (MTJ)‐based magnetoelectric logic gates that is currently explored at Tsinghua University, Beijiing. These gates can directly take the electric field as the logical input/output. The device thus exploits the best aspects of both, the emerging MTJ‐based logic devices and current CMOS‐based technology, offering interesting potential for a next generation of non‐volatile, fast, and energy‐efficient logic devices.