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Intensity‐dependent ultrafast dynamics of injection currents in unbiased GaAs quantum wells
Author(s) -
Pochwała Michał,
Duc Huynh Thanh,
Förstner Jens,
Meier Torsten
Publication year - 2011
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201004529
Subject(s) - quantum well , intensity (physics) , semiconductor , condensed matter physics , ultrashort pulse , physics , current (fluid) , atomic physics , chemistry , quantum mechanics , laser , thermodynamics
The intensity dependence of optically‐induced injection currents in unbiased GaAs semiconductor quantum wells grown in [110] direction is investigated theoretically for a number of well widths. Our microscopic analysis is based on a 14 × 14 band k · p method in combination with the multisubband semiconductor Bloch equations. An oscillatory dependence of the injection current transients as function of intensity and time is predicted and explained. It is demonstrated that optical excitations involving different subbands and Rabi flopping are responsible for this complex dynamics. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)