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Phase transformation mechanism of In–Sb–Te through the boundary reaction between InSb and InTe
Author(s) -
Kim Yong Tae,
Kim Eun Tae,
Kim Chung Soo,
Lee Jeong Yong
Publication year - 2011
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201004515
Subject(s) - crystallography , phase boundary , chemistry , condensed matter physics , boundary (topology) , lattice (music) , crystallization , distortion (music) , diffusion , phase (matter) , materials science , physics , thermodynamics , optoelectronics , mathematical analysis , mathematics , amplifier , organic chemistry , cmos , acoustics
The boundary reaction between InSb and InTe bilayers shows that In 3 Sb 1 Te 2 (IST) is formed at the InTe side first due to the diffusion of Sb atoms from InSb to InTe rather than the diffusion of Te atoms from InTe to InSb at the crystallization temperature of IST. The diffusion of Sb atoms into InTe changes the atomic configuration of InTe, which leads to small lattice distortion and a coherent boundary region for the formation of IST crystalline thin films. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)