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Effect of III‐nitride polarization on V OC in p–i–n and MQW solar cells
Author(s) -
Namkoong Gon,
Boland Patrick,
Bae SiYoung,
Shim JaePhil,
Lee DongSeon,
Jeon SeongRan,
Foe Kurniawan,
Latimer Kevin,
Doolittle W. Alan
Publication year - 2011
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201004512
Subject(s) - piezoelectricity , polarization (electrochemistry) , nitride , polar , solar cell , optoelectronics , materials science , open circuit voltage , voltage , chemistry , physics , nanotechnology , composite material , layer (electronics) , quantum mechanics , astronomy
We performed detailed studies of the effect of polarization on III‐nitride solar cells. Spontaneous and piezoelectric polarizations were assessed to determine their impacts upon the open circuit voltages ( V OC ) in p–i(InGaN)–n and multi‐quantum well (MQW) solar cells. We found that the spontaneous polarization in Ga‐polar p–i–n solar cells strongly modifies energy band structures and corresponding electric fields in a way that degrades V OC compared to non‐polar p–i–n structures. In contrast, we found that piezoelectric polarization in Ga‐polar MQW structures does not have a large influence on V OC compared to non‐polar MQW structures. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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