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Photo‐capacitance spectroscopy investigation of deep‐level defects in AlGaN/GaN hetero‐structures with different current collapses
Author(s) -
Nakano Yoshitaka,
Irokawa Yoshihiro,
Sumida Yasunobu,
Yagi Shuichi,
Kawai Hiroji
Publication year - 2010
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201004421
Subject(s) - capacitance , materials science , optoelectronics , conduction band , spectroscopy , diode , schottky barrier , schottky diode , current (fluid) , impurity , photoluminescence , deep level transient spectroscopy , condensed matter physics , chemistry , electrical engineering , physics , silicon , electron , electrode , organic chemistry , quantum mechanics , engineering
We have investigated electronic deep levels in two AlGaN/GaN hetero‐structures with different current collapses grown at 1150 and 1100 °C by a photo‐capacitance spectroscopy technique, using Schottky barrier diodes. Three specific deep levels located at ∼2.07, ∼2.80, and ∼3.23 eV below the conduction band were found to be significantly enhanced for severe current collapse, being in reasonable agreement with photoluminescence and capacitance–voltage characteristics. These levels probably originate in Ga vacancies and residual C impurities and are probably responsible for the current collapse phenomena of the AlGaN/GaN hetero‐structures. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)