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Surface mediated control of droplet density and morphology on GaAs and AlAs surfaces
Author(s) -
Wu Jiang,
Wang Zhiming M.,
Li Alvason Z.,
Li Shibin,
Salamo Gregory J.
Publication year - 2010
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201004402
Subject(s) - materials science , surface (topology) , morphology (biology) , gallium , nanostructure , aluminium , gallium arsenide , epitaxy , nanotechnology , optoelectronics , composite material , layer (electronics) , metallurgy , geometry , genetics , mathematics , biology
Abstract We present a comparative study of gallium (Ga) and aluminium (Al) droplets fabricated on GaAs (100) and AlAs (100) surfaces. Higher density of Ga droplets is achieved on AlAs surface compared with GaAs surface. Similarly, the density of Al nanostructures is higher on AlAs surface than on GaAs surface, even though different morphologies are obtained on each surface. Further, while uniform Ga droplets are formed on both GaAs and AlAs surfaces, Al rings and dots, with big inhomogeneity, are observed on GaAs and AlAs surface, respectively. This investigation suggests that size and shape of nanostructures grown by the droplet epitaxy method can be designed by employing different surfaces. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)