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First evidence of resistive switching in polycrystalline GaV 4 S 8 thin layers
Author(s) -
Souchier Emeline,
Cario Laurent,
Corraze Benoit,
Moreau Philippe,
Mazoyer Pascale,
Estournès Claude,
Retoux Richard,
Janod Etienne,
Besland MariePaule
Publication year - 2011
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201004392
Subject(s) - crystallite , thin film , materials science , sputter deposition , resistive touchscreen , diffraction , sputtering , cavity magnetron , spectroscopy , optoelectronics , crystallography , analytical chemistry (journal) , chemistry , optics , nanotechnology , metallurgy , electrical engineering , physics , engineering , chromatography , quantum mechanics
Recently a new type of reversible and non‐volatile resistive switching was discovered in single crystals of Mott insulators AM 4 X 8 (A = Ga, Ge; M = V, Nb, Ta; X = S, Se). Here we report on the first synthesis of thin layers (thicknesses in the 100 to 1000 nm range) of GaV 4 S 8 by RF magnetron sputtering process. Energy dispersive spectroscopy, X‐ray diffraction and TEM analyses attest the high quality of polycrystalline GaV 4 S 8 thin layers. Electrical measurements demonstrate that deposited GaV 4 S 8 thin films exhibit a non‐volatile reversible resistive switching at room temperature with writing/erasing times of ∼10 µs and a memory window ( R high – R low )/ R low > 33%. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)