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Fully room‐temperature‐fabricated TiN/TaO x /Pt nonvolatile memory devices
Author(s) -
Choi Sun Young,
Yang Min Kyu,
Kim Sangsig,
Lee JeonKook
Publication year - 2010
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201004388
Subject(s) - tin , non volatile memory , materials science , fabrication , optoelectronics , electrical conductor , resistive random access memory , voltage , nanotechnology , electrical engineering , composite material , metallurgy , engineering , medicine , alternative medicine , pathology
The reliable resistive switching properties of TiN/TaO x /Pt structures fabricated with a fully room‐temperature process are demonstrated in this letter. The devices exhibited a low operation voltage of 0.6 V as well as good endurance up to 10 5 cycles. No data loss was reported upon continuous readout for more than 10 4 s at 125 °C. Multilevel storage is feasible due to the dependence of the low resistance state (LRS) on the initial “SET” (switch from high to low RS) compliance current. The values of LRS showed no dependence on the size of the device, which correlated with the localized conductive filament mechanism. This nonvolatile multilevel memory effect and the fully room‐temperature fabrication process make the TiN/TaO x /Pt memory devices promising for future nonvolatile memory application. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)