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Stress‐enhanced dislocation density reduction in multicrystalline silicon
Author(s) -
Bertoni M. I.,
Powell D. M.,
Vogl M. L.,
Castellanos S.,
Fecych A.,
Buonassisi T.
Publication year - 2011
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201004344
Subject(s) - dislocation , materials science , silicon , reduction (mathematics) , stress (linguistics) , stress reduction , peierls stress , crystallography , condensed matter physics , metallurgy , composite material , dislocation creep , chemistry , geometry , mathematics , psychology , physics , linguistics , philosophy , psychotherapist
Stress is generally perceived to be detrimental for multicrystalline silicon (mc‐Si), leading to dislocation multiplication during crystal growth and processing. Herein, we evaluate the role of stress as a driving force for dislocation density reduction in mc‐Si. At high temperatures, close to the melting point (>0.8 T m ), we observe that the application of stress as well as the relief of residual stress, can modify the density of pre‐existing dislocations in as‐grown mc‐Si under certain conditions, leading to a net local reduction of dislocation density. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)