Mg‐doped Al 0.85 Ga 0.15 N layers grown by  hot‐wall  MOCVD with low resistivity at room temperature | Zendy

KakanakovaGeorgieva A. | Zendy; Nilsson D. | Zendy; Stattin M. | Zendy; Forsberg U. | Zendy; Haglund Å. | Zendy; Larsson A. | Zendy; Janzén E. | Zendy

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Mg‐doped Al 0.85 Ga 0.15 N layers grown by hot‐wall MOCVD with low resistivity at room temperature

Author(s) -

KakanakovaGeorgieva A.,

Nilsson D.,

Stattin M.,

Forsberg U.,

Haglund Å.,

Larsson A.,

Janzén E.

Publication year - 2010

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.201004290

Subject(s) - metalorganic vapour phase epitaxy , electrical resistivity and conductivity , annealing (glass) , doping , materials science , conductivity , analytical chemistry (journal) , mineralogy , chemistry , nanotechnology , metallurgy , optoelectronics , epitaxy , layer (electronics) , electrical engineering , chromatography , engineering

We report on the hot‐wall MOCVD growth of Mg‐doped Al x Ga 1– x N layers with an Al content as high as x ∼ 0.85. After subjecting the layers to post‐growth in‐situ annealing in nitrogen in the growth reactor, a room temperature resistivity of 7 kΩ cm was obtained indicating an enhanced p‐type conductivity compared to published data for Al x Ga 1– x N layers with a lower Al content of x ∼ 0.70 and a room temperature resistivity of about 10 kΩ cm. It is believed that the enhanced p‐type conductivity is a result of reduced compensation by native defects through growth conditions enabled by the distinct hot‐wall MOCVD system. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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