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Mg‐doped Al 0.85 Ga 0.15 N layers grown by hot‐wall MOCVD with low resistivity at room temperature
Author(s) -
KakanakovaGeorgieva A.,
Nilsson D.,
Stattin M.,
Forsberg U.,
Haglund Å.,
Larsson A.,
Janzén E.
Publication year - 2010
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201004290
Subject(s) - metalorganic vapour phase epitaxy , electrical resistivity and conductivity , annealing (glass) , doping , materials science , conductivity , analytical chemistry (journal) , mineralogy , chemistry , nanotechnology , metallurgy , optoelectronics , epitaxy , layer (electronics) , electrical engineering , chromatography , engineering
We report on the hot‐wall MOCVD growth of Mg‐doped Al x Ga 1– x N layers with an Al content as high as x ∼ 0.85. After subjecting the layers to post‐growth in‐situ annealing in nitrogen in the growth reactor, a room temperature resistivity of 7 kΩ cm was obtained indicating an enhanced p‐type conductivity compared to published data for Al x Ga 1– x N layers with a lower Al content of x ∼ 0.70 and a room temperature resistivity of about 10 kΩ cm. It is believed that the enhanced p‐type conductivity is a result of reduced compensation by native defects through growth conditions enabled by the distinct hot‐wall MOCVD system. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)