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Chloride‐based CVD of 3C‐SiC epitaxial layers on 6H(0001) SiC
Author(s) -
Leone Stefano,
Beyer Franziska C.,
Henry Anne,
Kordina Olof,
Janzén Erik
Publication year - 2010
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201004271
Subject(s) - epitaxy , materials science , doping , chloride , growth rate , analytical chemistry (journal) , hydrogen , chemical engineering , optoelectronics , nanotechnology , chemistry , metallurgy , layer (electronics) , chromatography , organic chemistry , geometry , mathematics , engineering
The heteroepitaxial growth of 3C‐SiC on 6H‐SiC(0001) on‐axis substrates is demonstrated in this study. A hot‐wall CVD reactor working at a reduced pressure was used to perform growth experiments at temperatures between 1300 °C and 1500 °C. The addition of hydrogen chloride to standard precursors allowed a wide window of operating parameters, which resulted in the growth of very high quality and purity 3C‐SiC layers, with a morphology characterized largely by single‐domains, especially when nitrogen was intentionally added. Growth rate of 10 µm/h and n‐type background doping in the low 10 15 cm –3 range were achieved. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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