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Ge/Si(100) quantum dots grown via a thin Sb layer
Author(s) -
Tonkikh Alexander,
Zakharov Nikolay,
Talalaev Vadim,
Werner Peter
Publication year - 2010
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201004259
Subject(s) - quantum dot , antimony , molecular beam epitaxy , photoluminescence , substrate (aquarium) , layer (electronics) , deposition (geology) , materials science , spectroscopy , epitaxy , analytical chemistry (journal) , nanotechnology , optoelectronics , chemistry , physics , paleontology , oceanography , quantum mechanics , chromatography , sediment , geology , metallurgy , biology
We report on a way to grow very small Ge islands (basis about 15 nm, height about 1 nm, density 2 × 10 11 cm –2 ) on a Si substrate by molecular beam epitaxy. By the deposition of lowest amounts of antimony prior to the Ge deposition we could influence the formation kinetics of Ge islands. After the covering of the islands by a Si layer the samples show pronounced photoluminescence at room temperature in the range of 1.5 μm. The results of the optical spectroscopy experiments are interpreted in this way that these Ge nanoislands show a quantum confinement, and therefore, they can be regarded as quantum dots.AFM and TEM micrographs, and room temperature PL spectrum of Sb assisted Ge/Si(100) QDs. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)