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Hydrogenated amorphous silicon based surface passivation of c‐Si at high deposition temperature and rate
Author(s) -
Illiberi A.,
Creatore M.,
Kessels W. M. M.,
van de Sanden M. C. M.
Publication year - 2010
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201004234
Subject(s) - passivation , deposition (geology) , wafer , materials science , silicon , substrate (aquarium) , amorphous silicon , chemical engineering , amorphous solid , atmospheric temperature range , nanotechnology , optoelectronics , crystalline silicon , chemistry , crystallography , layer (electronics) , paleontology , oceanography , sediment , geology , engineering , physics , meteorology , biology
Low substrate temperature during deposition of a‐Si:H is considered a necessary condition to reach excellent surface passivation of c‐Si wafers, such as a hydrogen‐rich and atomically abrupt a‐Si:H/c‐Si interface forms. From a comparison between surface passivation levels achieved by different deposition methods, delivering a broad range of a‐Si:H growth rates, we show that a high a‐Si:H deposition rate (∼3 nm/s) is crucial in achieving an excellent level of surface passivation at high deposition temperatures (>425 °C) compatible with emerging post‐deposition thermal treatments of solar cells. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)