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Optical polarization characteristics of m ‐plane InGaN films coherently grown on ZnO substrates
Author(s) -
Kobayashi Atsushi,
Shimomoto Kazuma,
Ohta Jitsuo,
Fujioka Hiroshi,
Oshima Masaharu
Publication year - 2010
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201004204
Subject(s) - materials science , photoluminescence , polarization (electrochemistry) , epitaxy , reciprocal lattice , optoelectronics , pulsed laser deposition , wavelength , laser , thin film , optics , diffraction , nanotechnology , chemistry , physics , layer (electronics)
We investigated the optical polarization characteristics in m ‐plane In 0.33 Ga 0.67 N films grown on ZnO substrates using room temperature grown epitaxial GaN buffer layers. We found that m ‐plane InGaN films with a film thickness of 400 nm can be grown coherently on m ‐plane ZnO substrates at 660 °C by pulsed laser deposition. Reciprocal space mapping revealed that the InGaN film possesses compressive strains as large as 1.7% and 2.6% along the a ‐ and c ‐axes, respectively. Photoluminescence polarized along the c ‐axis with a peak wavelength of 505 nm was observed from the strongly compressed InGaN film. We also found that the degree of polarization depends strongly upon the strain in the m ‐plane InGaN, and the coherent growth of m ‐plane InGaN on ZnO substrates leads to an enhancement in c ‐axis polarization. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)