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Photoluminescence properties of GaAs nanowire ensembles with zincblende and wurtzite crystal structure
Author(s) -
Novikov B. V.,
Serov S. Yu.,
Filosofov N. G.,
Shtrom I. V.,
Talalaev V. G.,
Vyvenko O. F.,
Ubyivovk E. V.,
Samsonenko Yu. B.,
Bouravleuv A. D.,
Soshnikov I. P.,
Sibirev N. V.,
Cirlin G. E.,
Dubrovskii V. G.
Publication year - 2010
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201004185
Subject(s) - wurtzite crystal structure , photoluminescence , molecular beam epitaxy , nanowire , materials science , exciton , crystal (programming language) , optoelectronics , transmission electron microscopy , epitaxy , nanotechnology , condensed matter physics , physics , zinc , layer (electronics) , computer science , metallurgy , programming language
Self‐standing III–V nanowires (NWs) are promising building blocks for future optoelectronic devices such as LEDs, lasers, photodetectors and solar cells. In this work, we present the results of low temperature photoluminescence (PL) characterization of GaAs NWs grown by Au‐assisted molecular beam epitaxy (MBE), coupled with the transmission electron microscopy (TEM) structural analysis. PL spectra contain exci‐ ton peaks from zincblende (ZB) and wurtzite (WZ) crystal structures of GaAs. The peaks are influenced by the quantum confinement effects. PL bands corresponding to the exciton emission from ZB and WZ crystal phases are identified, relating to the PL peaks at 1.519 eV and 1.478 eV, respectively. The obtained red shift of 41 meV for WZ GaAs should persist in thin NWs as well as in bulk materials. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)