Formation of basal plane fiber‐textured Ti 2 AlN films on amorphous substrates | Zendy

Beckers M. | Zendy; Eriksson F. | Zendy; Lauridsen J. | Zendy; Baehtz C. | Zendy; Jensen J. | Zendy; Hultman L. | Zendy

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Formation of basal plane fiber‐textured Ti 2 AlN films on amorphous substrates

Author(s) -

Beckers M.,

Eriksson F.,

Lauridsen J.,

Baehtz C.,

Jensen J.,

Hultman L.

Publication year - 2010

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.201004100

Subject(s) - materials science , amorphous solid , annealing (glass) , epitaxy , rutherford backscattering spectrometry , crystallography , scattering , in situ , analytical chemistry (journal) , composite material , thin film , nanotechnology , chemistry , layer (electronics) , optics , physics , organic chemistry , chromatography

The synthesis of fiber‐textured Ti 2 AlN(0001) films on SiO 2 was characterized by in‐situ and ex‐situ X‐ray scattering and Rutherford backscattering spectrometry. Ti 2 AlN was formed by solid‐state reaction between sequentially deposited Ti and AlN layers. A deposition at 275 °C yields a Ti(0001) out‐of‐plane orientation which is maintained for the following AlN(0001)/Ti(0001) layers. Annealing to 600 °C yields AlN decomposition and diffusion of Al and N into Ti, with consecutive transformation into Ti 3 AlN(111) and Ti 2 AlN(0001) plus AlN residuals. Despite preferred Ti 2 AlN(0001) out‐of‐plane orientation, the in‐plane distribution is random, as expected from the self‐organized pseudo‐epitaxial growth. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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