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Sputtered Zn(O,S) for junction formation in chalcopyrite‐based thin film solar cells
Author(s) -
Grimm A.,
Just J.,
Kieven D.,
Lauermann I.,
Palm J.,
Neisser A.,
Rissom T.,
Klenk R.
Publication year - 2010
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201004083
Subject(s) - chalcopyrite , crystallite , thin film , sputtering , materials science , layer (electronics) , substrate (aquarium) , argon , chemical engineering , thin film solar cell , solar cell , analytical chemistry (journal) , optoelectronics , chemistry , metallurgy , nanotechnology , copper , geology , environmental chemistry , oceanography , organic chemistry , engineering
In an effort to eliminate the standard CdS buffer layer from chalcopyrite‐based thin film solar cells we have investigated sputtered Zn(O,S) films. They were prepared by partially reactive sputtering from a ZnS target in an argon/oxygen mixture. Single phase, polycrystalline films were achieved for substrate temperatures of at least 100 °C. Test devices prepared in a completely dry process showed superior blue response and active area conversion efficiencies up to 13.7%. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)