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Bias polarity dependent local electrical conduction in resistive switching TiO 2 thin films
Author(s) -
Shin Yong Cheol,
Lee Min Hwan,
Kim Kyung Min,
Kim Gun Hwan,
Song Seul Ji,
Seok Jun Yeong,
Hwang Cheol Seong
Publication year - 2010
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201004066
Subject(s) - conductive atomic force microscopy , thermal conduction , electric field , materials science , electrode , electrical conductor , electrical resistivity and conductivity , condensed matter physics , resistive touchscreen , polarity (international relations) , electrical conduction , optoelectronics , nanotechnology , atomic force microscopy , chemistry , electrical engineering , composite material , physics , biochemistry , engineering , quantum mechanics , cell
The localized electrical conduction behaviour of a resistive switching TiO 2 film was examined by conductive atomic force microscopy (CAFM). Localized filamentary electrical conduction was well resolved with a negative tip bias with respect to the Pt bottom electrode whereas almost uniform electrical conduction was observed with a positive bias. The bias dependence of the CAFM result was attributed to local electrochemical reactions mediated by the high electric field near the CAFM tip. A positive tip bias extended the electrically conducting area much more than the actual tip–surface contact area presumably due to facilitated oxygen loss by the high electric field. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)