Growth of semipolar (10 $ \bar 1\bar 3 $ ) InN on  m  ‐plane sapphire using MOVPE | Zendy

Dinh Duc V. | Zendy; Pristovsek M. | Zendy; Kremzow R. | Zendy; Kneissl M. | Zendy

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Growth of semipolar (10 $ \bar 1\bar 3 $ ) InN on m ‐plane sapphire using MOVPE

Author(s) -

Dinh Duc V.,

Pristovsek M.,

Kremzow R.,

Kneissl M.

Publication year - 2010

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.201004043

Subject(s) - metalorganic vapour phase epitaxy , bar (unit) , materials science , epitaxy , sapphire , photoluminescence , surface finish , surface roughness , morphology (biology) , plane (geometry) , crystallography , optoelectronics , analytical chemistry (journal) , optics , nanotechnology , chemistry , composite material , geometry , physics , laser , mathematics , layer (electronics) , biology , meteorology , genetics , chromatography

We report on the growth of semi‐polar InN directly on m ‐plane sapphires by metal‐organic vapor phase epitaxy with different nitridation times from 45 s to 6 min. Surface morphology and crystalline orientation depended on the nitridation time. Semipolar InN with (10 $ \bar 1\bar 3 $ ) dominant orientation was obtained at 2 min and 4 min nitridation, shorter or longer nitridation times showed additional orientations. The (10 $ \bar 1\bar 3 $ ) InN has a roughness about 30 nm (scale size 5 × 5 µm 2 ), likely due to twinning. Low temperature photoluminescence showed emission peaks between 0.72 eV to 0.75 eV, which is slightly below the energy observed for (0001) InN. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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