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Ferroelectric properties of BiFeO 3 thin films deposited on substrates with large lattice mismatch
Author(s) -
Shelke Vilas,
Srinivasan Gopalan,
Gupta Arunava
Publication year - 2010
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200903428
Subject(s) - ferroelectricity , materials science , epitaxy , lattice (music) , thin film , condensed matter physics , polarization (electrochemistry) , lattice constant , optoelectronics , nanotechnology , optics , chemistry , diffraction , physics , dielectric , layer (electronics) , acoustics
BiFeO 3 thin films have been grown on large lattice mismatched substrates – LaAlO 3 (001) and MgO(001) – and their properties compared with those grown on SrTiO 3 (001) substrates. While epitaxial growth occurs on LaAlO 3 and SrTiO 3 substrates, the film grows highly textured on MgO substrate. In spite of the lattice mismatch, all the films exhibit excellent ferroelectric polarization and low leakage current characteristics. The present study indicates that close lattice parameter matching or strain induction is not a stringent criterion for the observation of ferroelectric behavior in BiFeO 3 films. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)