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Ultrasharp Si nanowires produced by plasma‐enhanced chemical vapor deposition
Author(s) -
Červenka J.,
Ledinský M.,
Stuchlíková H.,
Stuchlík J.,
Výborný Z.,
Holovský J.,
Hruška K.,
Fejfar A.,
Kočka J.
Publication year - 2010
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200903348
Subject(s) - nanowire , raman spectroscopy , chemical vapor deposition , materials science , amorphous solid , nanotechnology , plasma enhanced chemical vapor deposition , vapor–liquid–solid method , silicon , silicon nanowires , chemical engineering , optoelectronics , chemistry , optics , crystallography , physics , engineering
Conical silicon nanowires have been grown by gold nanoparticle catalyzed plasma‐enhanced chemical vapor deposition. This method produces Si nanowires with a very fast growth rate (1 μm/min) and unique sharpness (<10 nm). Raman spectroscopy has proved the presence of both crystalline and amorphous Si in the grown Si nanowire layer. The fast growth process of Si nanowires with dimensions below 10 nm holds promises in various applications in electronics, photovoltaics and atomic force microscopy.(© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)