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Morphological and electrical changes in TiO 2 memristive devices induced by electroforming and switching
Author(s) -
Münstermann Ruth,
Yang J. Joshua,
Strachan John Paul,
MedeirosRibeiro Gilberto,
Dittmann Regina,
Waser Rainer
Publication year - 2010
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200903347
Subject(s) - electroforming , materials science , memristor , electrical conductor , conductance , optoelectronics , nanotechnology , resistive touchscreen , morphology (biology) , condensed matter physics , electronic engineering , composite material , electrical engineering , physics , layer (electronics) , engineering , biology , genetics
Combining delamination technique with conductive AFM, we have been able to reveal spatially resolved morphology and conductance changes in TiO 2 memristive junctions after electroforming and switching. Being able to distinguish between effects caused by electroforming and switching, respectively, we could demonstrate that electroforming results in the creation of localized conductance channels induced by oxygen evolution while subsequent resistive switching causes an additional conducting structure next to the forming spot. We observe that the lateral extent of this structure depends on the number of switching cycles indicating an ongoing breaking of existing and creation of neighbouring current channels during subsequent switching. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)