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Spatially resolved determination of dark saturation current and series resistance of silicon solar cells
Author(s) -
Glatthaar Markus,
Haunschild Jonas,
Kasemann Martin,
Giesecke Johannes,
Warta Wilhelm,
Rein Stefan
Publication year - 2010
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200903290
Subject(s) - equivalent series resistance , luminescence , saturation (graph theory) , saturation current , photoluminescence , silicon , series (stratigraphy) , materials science , recombination , characterization (materials science) , dark current , optoelectronics , nanotechnology , chemistry , physics , geology , mathematics , paleontology , biochemistry , quantum mechanics , voltage , combinatorics , gene , photodetector
Luminescence images of silicon solar cells contain information about local recombination properties and local series resistance. It is difficult to separate the information and interpret single images correctly and quantitatively though, which greatly limits the use of single luminescence images, in particular for the application as an in‐production characterization tool. We therefore developed a fast method based on photoluminescence imaging for a spatially resolved coupled determination of the dark saturation current and series resistance (C‐DCR). (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)