Growth temperature and plasma power effects on N incorporation in InSbN grown by molecular beam epitaxy | Zendy

Lim K. P. | Zendy; Pham H. T. | Zendy; Yoon S. F. | Zendy; Markwitz A. | Zendy; Yakovlev N. | Zendy

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Growth temperature and plasma power effects on N incorporation in InSbN grown by molecular beam epitaxy

Author(s) -

Lim K. P.,

Pham H. T.,

Yoon S. F.,

Markwitz A.,

Yakovlev N.

Publication year - 2009

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.200903229

Subject(s) - molecular beam epitaxy , nitride , plasma , chemistry , analytical chemistry (journal) , nitrogen , diffraction , spectroscopy , epitaxy , materials science , optics , physics , organic chemistry , layer (electronics) , quantum mechanics , chromatography

Dilute nitride InSbN alloys have been grown using radio frequency plasma‐assisted molecular beam epitaxy. The effects of low growth temperature (270–330 °C) and nitrogen plasma power (150–180 W) on the N incorporation were studied. From the X‐ray diffraction (XRD), secondary ion mass spectroscopy and the nuclear reaction analysis ( 14 N(d,p 5 ) 15 N), the highest ratio of substitutional N Sb over the undesired interstitial N is yielded at the lower limit of 270 °C. Like N Sb , a large amount of interstitial N–N also contribute to lattice contraction. Increasing the plasma power (180 W) results in a significant increase in interstitial N in [011] direction. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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