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Growth temperature and plasma power effects on N incorporation in InSbN grown by molecular beam epitaxy
Author(s) -
Lim K. P.,
Pham H. T.,
Yoon S. F.,
Markwitz A.,
Yakovlev N.
Publication year - 2009
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200903229
Subject(s) - molecular beam epitaxy , nitride , plasma , chemistry , analytical chemistry (journal) , nitrogen , diffraction , spectroscopy , epitaxy , materials science , optics , physics , organic chemistry , layer (electronics) , quantum mechanics , chromatography
Dilute nitride InSbN alloys have been grown using radio frequency plasma‐assisted molecular beam epitaxy. The effects of low growth temperature (270–330 °C) and nitrogen plasma power (150–180 W) on the N incorporation were studied. From the X‐ray diffraction (XRD), secondary ion mass spectroscopy and the nuclear reaction analysis ( 14 N(d,p 5 ) 15 N), the highest ratio of substitutional N Sb over the undesired interstitial N is yielded at the lower limit of 270 °C. Like N Sb , a large amount of interstitial N–N also contribute to lattice contraction. Increasing the plasma power (180 W) results in a significant increase in interstitial N in [011] direction. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)