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Copper source/drain electrode contact resistance effects in amorphous indium–gallium–zinc‐oxide thin film transistors
Author(s) -
Kim WoongSun,
Moon YeonKeon,
Lee Sih,
Kang ByungWoo,
Kwon TaeSeok,
Kim KyungTaek,
Park JongWan
Publication year - 2009
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200903225
Subject(s) - thin film transistor , materials science , electrode , optoelectronics , amorphous solid , contact resistance , transistor , zinc , indium , gallium , copper , electrical engineering , voltage , nanotechnology , metallurgy , layer (electronics) , chemistry , organic chemistry , engineering
This paper focuses on the viability of low‐resistivity electrode material (Cu) for source/drain electrodes in thin film transistors (TFTs). The effective resistances between Cu source/drain electrodes and amorphous indium gallium zinc oxide (a‐IGZO) thin‐film transistors were examined. Intrinsic TFT parameters were extracted by the transmission line method (TLM) using a series of TFTs with different channel lengths measured at a low source/drain voltage. The TFTs fabricated with Cu source/drain electrodes showed good transfer characteristics with a field‐effect mobility of 9.64 cm 2 /Vs, and good output characteristics with steep rise in the low V DS region. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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