Premium
Low‐frequency capacitance–voltage study of hydrogen interaction with Pt–AlGaN/GaN Schottky barrier diodes
Author(s) -
Irokawa Yoshihiro,
Matsuki Nobuyuki,
Sumiya Masatomo,
Sakuma Yoshiki,
Sekiguchi Takashi,
Chikyo Toyohiro,
Sumida Yasunobu,
Nakano Yoshitaka
Publication year - 2009
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200903204
Subject(s) - capacitance , schottky diode , oscillation (cell signaling) , dipole , hydrogen , schottky barrier , materials science , diode , optoelectronics , polarization (electrochemistry) , low frequency , chemistry , analytical chemistry (journal) , condensed matter physics , electrode , physics , biochemistry , organic chemistry , chromatography , astronomy
We have investigated the interaction of hydrogen with Pt–AlGaN/GaN Schottky barrier diodes (SBDs) using a low‐frequency capacitance–voltage ( C – V ) technique. At a frequency of 1 kHz, the C–V curve in hydrogen shifts toward negative bias values as compared with that in nitrogen. As the frequency decreases from 1 kHz to 1 Hz, the capacitance in hydrogen significantly increases and an oscillation of the capacitance is observed. These C–V characteristics are quite anomalous and have not been reported yet, suggesting the formation of an interfacial polarization which could be attributable to hydrogen‐related dipoles. The oscillation of the capacitance may be related to the alignment of the dipoles. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)