z-logo
Premium
Effect of the dimer structure on indium adsorption and diffusion on a GaSb surface
Author(s) -
Xiong Min,
Li Meicheng,
Zhao Yu,
Wang Lu,
Liang Yi,
Zhao Liancheng
Publication year - 2009
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200903197
Subject(s) - dimer , indium , diffusion , adsorption , chemistry , chemical physics , surface diffusion , diffusion barrier , crystallography , surface (topology) , materials science , nanotechnology , layer (electronics) , thermodynamics , geometry , physics , mathematics , organic chemistry
The adsorption properties and surface diffusion of an indium adatom on a GaSb(001)‐(2 × 3) structure have been studied using first‐principles calculations. We find that the indium adatoms are preferentially adsorbed in the low energy trenches along the [110] direction at bridge positions of surface dimers. Besides, the adsorption sites connecting these trenches along [110] present distinct properties for different surface dimer structures. For the structure with Sb–Sb homodimers, the dimer arrangement reduces significantly the adatom diffusion barrier along the [110] direction and the calculations on diffusion coefficients demonstrate that [110] is the fast diffusion direction. While on the structure with Ga–Sb heterodimers, the adsorption sites are separated by the heterodimers causing a considerable diffusion barrier and [ $ \bar 1 $ 10] becomes the fast diffusion direction accordingly. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom