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Effect of the dimer structure on indium adsorption and diffusion on a GaSb surface
Author(s) -
Xiong Min,
Li Meicheng,
Zhao Yu,
Wang Lu,
Liang Yi,
Zhao Liancheng
Publication year - 2009
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200903197
Subject(s) - dimer , indium , diffusion , adsorption , chemistry , chemical physics , surface diffusion , diffusion barrier , crystallography , surface (topology) , materials science , nanotechnology , layer (electronics) , thermodynamics , geometry , physics , mathematics , organic chemistry
The adsorption properties and surface diffusion of an indium adatom on a GaSb(001)‐(2 × 3) structure have been studied using first‐principles calculations. We find that the indium adatoms are preferentially adsorbed in the low energy trenches along the [110] direction at bridge positions of surface dimers. Besides, the adsorption sites connecting these trenches along [110] present distinct properties for different surface dimer structures. For the structure with Sb–Sb homodimers, the dimer arrangement reduces significantly the adatom diffusion barrier along the [110] direction and the calculations on diffusion coefficients demonstrate that [110] is the fast diffusion direction. While on the structure with Ga–Sb heterodimers, the adsorption sites are separated by the heterodimers causing a considerable diffusion barrier and [ $ \bar 1 $ 10] becomes the fast diffusion direction accordingly. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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