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Improved field‐induced strains and fatigue endurance of PLZT antiferroelectric thick films by orientation control
Author(s) -
Hao Xihong,
Zhai Jiwei,
Yang Jichun,
Ren Huiping,
Song Xiwen
Publication year - 2009
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200903174
Subject(s) - lanio , materials science , antiferroelectricity , ferroelectricity , platinum , electric field , electrode , orientation (vector space) , composite material , optoelectronics , dielectric , chemistry , biochemistry , physics , geometry , mathematics , quantum mechanics , catalysis
(Pb 0.97 L 0.02 )(Zr 0.95 Ti 0.05 )O 3 (PLZT) antiferroelectric thick films with (100) and (110) orientation were fabricated on platinum and LaNiO 3 ‐buffered silicon substrates through a modified sol–gel process. It was demonstrated that the PLZT thick films with (110) preferred orientation had an enhanced electric‐field‐induced strain, by 77% as compared to the films with (100) orientation. Also, the antiferroelectric–ferroelectric switching field for the PLZT thick films with (110) orientation was 200 kV/cm, which was much lower than that (256 kV/cm) of the (100) oriented films. Moreover, the fatigue behavior of the PLZT thick films on LaNiO 3 electrodes was much better than that of the films on platinum electrodes. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)