Premium
Rectifying properties and photoresponse of CVD diamond p(i)n‐junctions
Author(s) -
Haenen Ken,
Lazea Andrada,
Nesládek Miloš,
Koizumi Satoshi
Publication year - 2009
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200903155
Subject(s) - diamond , materials science , optoelectronics , rectification , chemical vapor deposition , layer (electronics) , diode , doping , band gap , substrate (aquarium) , crystallite , stack (abstract data type) , voltage , nanotechnology , composite material , electrical engineering , oceanography , geology , metallurgy , engineering , computer science , programming language
The current–voltage characteristics and photoresponse of mesa structured {111}‐oriented homoepitaxial CVD diamond p(i)n‐junctions with different intrinsic layer thickness are investigated. When a sufficiently thick intrinsic layer is present, a rectification ratio of 10 8 at ±10 V could be obtained. Good rectifying diodes show a high photoresponse ratio between 210 nm (above bandgap) and 500 nm (below bandgap), making them suitable for UV detection purposes. The results are compared with similar measurements carried out on polycrystalline CVD diamond pn‐junctions.18 diamond pin mesa structures (250 μm in diameter) based on a boron‐doped/intrinsic/P‐doped CVD layer stack deposited on a 2 × 2 × 0.5 mm 3 {111} Ib HPHT diamond substrate. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)