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Large area mapping of the alloy composition of Al x Ga 1– x N using infrared reflectivity
Author(s) -
Henry A.,
Lundskog A.,
Janzén E.
Publication year - 2009
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200903113
Subject(s) - wurtzite crystal structure , alloy , wafer , reflectivity , epitaxy , substrate (aquarium) , calibration , materials science , composition (language) , infrared , infrared spectroscopy , optics , analytical chemistry (journal) , crystallography , optoelectronics , chemistry , nanotechnology , physics , metallurgy , geology , zinc , linguistics , oceanography , organic chemistry , layer (electronics) , quantum mechanics , chromatography , philosophy
The energy position of a dip observed in the IR‐reflectance spectra recorded from wurtzite c ‐plane Al x Ga 1– x N epitaxial films grown on SiC substrate reflects the composition of the alloy. A calibration procedure is presented with the possibility of mapping for large area wafer. The technique is non‐destructive, scalable and fast. The limitations are discussed and comparisons with other techniques are made. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)