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Room‐temperature epitaxial growth of high‐quality m ‐plane InGaN films on ZnO substrates
Author(s) -
Shimomoto Kazuma,
Kobayashi Atsushi,
Ueno Kohei,
Ohta Jitsuo,
Oshima Masaharu,
Fujioka Hiroshi,
Amanai Hidetaka,
Nagao Satoru,
Horie Hideyoshi
Publication year - 2009
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200903072
Subject(s) - reciprocal lattice , materials science , epitaxy , substrate (aquarium) , bar (unit) , diffraction , full width at half maximum , pulsed laser deposition , perpendicular , plane (geometry) , optoelectronics , optics , thin film , crystallography , analytical chemistry (journal) , chemistry , nanotechnology , physics , layer (electronics) , geometry , oceanography , mathematics , chromatography , meteorology , geology
The authors have grown high‐quality m ‐plane In 0.36 Ga 0.64 N (1 $ \bar 1 $ 00) films on ZnO (1 $ \bar 1 $ 00) substrates at room temperature (RT) by pulsed laser deposition (PLD) and have investigated their structural properties. m ‐plane InGaN films grown on ZnO substrates at RT possess atomically flat surfaces with stepped and terraced structures, indicating that the film growth proceeds in a two‐dimensional mode. X‐ray diffraction measurements have revealed that the m ‐plane InGaN films grow without phase separation reactions at RT. The full‐width at half‐maximum values of the 1 $ \bar 1 $ 00 X‐ray rocking curves of films with X‐ray incident azimuths perpendicular to the c ‐ and a ‐axis are 88 arcsec and 78 arcsec, respectively. Reciprocal space‐mapping has revealed that a 50 nm thick m ‐plane In 0.36 Ga 0.64 N film grows coherently on the ZnO substrate, which can probably explain the low defect density that is observed in the film. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)