Room‐temperature epitaxial growth of high‐quality m ‐plane InGaN films on ZnO substrates

The authors have grown high‐quality m ‐plane In 0.36 Ga 0.64 N (1 $ \bar 1 $ 00) films on ZnO (1 $ \bar 1 $ 00) substrates at room temperature (RT) by pulsed laser deposition (PLD) and have investigated their structural properties. m ‐plane InGaN films grown on ZnO substrates at RT possess atomically flat surfaces with stepped and terraced structures, indicating that the film growth proceeds in a two‐dimensional mode. X‐ray diffraction measurements have revealed that the m ‐plane InGaN films grow without phase separation reactions at RT. The full‐width at half‐maximum values of the 1 $ \bar 1 $ 00 X‐ray rocking curves of films with X‐ray incident azimuths perpendicular to the c ‐ and a ‐axis are 88 arcsec and 78 arcsec, respectively. Reciprocal space‐mapping has revealed that a 50 nm thick m ‐plane In 0.36 Ga 0.64 N film grows coherently on the ZnO substrate, which can probably explain the low defect density that is observed in the film. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)