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Insulator–semiconductor–metallic state transition induced by electric fields in Mn‐doped NaNbO 3
Author(s) -
Molak Andrzej,
Szot Krzysztof
Publication year - 2009
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200903052
Subject(s) - dopant , electric field , condensed matter physics , doping , materials science , metal–insulator transition , semiconductor , insulator (electricity) , ion , lattice (music) , homogeneous , percolation (cognitive psychology) , electrical resistance and conductance , metal , chemistry , optoelectronics , physics , composite material , thermodynamics , metallurgy , organic chemistry , quantum mechanics , neuroscience , biology , acoustics
The electro‐forming procedure was applied to NaNbO 3 :Mn and NaNbO 3 insulator crystals. The electric current flow induced a transition to the metallic‐type temperature dependence of the resistance. The Mn dopant shortened the time needed for the transition. The LC‐AFM measurement showed a non‐homogeneous distribution in local resistance resulting from the electric field via the AFM tip. We ascribe this effect to percolation in the network of the highly conducting filaments, whose formation is facilitated by the Mn ions. We conclude that the insulator–metal transition is induced within a subsystem of extended defects already existing in the NaNbO 3 :Mn crystal lattice host. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)