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Investigation of electrical characteristics of the In 3 Sb 1 Te 2 ternary alloy for application in phase‐change memory
Author(s) -
Kim Eun Tae,
Lee Jeong Yong,
Kim Yong Tae
Publication year - 2009
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200903049
Subject(s) - differential scanning calorimetry , ternary operation , phase change memory , materials science , alloy , amorphous solid , electrical resistivity and conductivity , phase (matter) , analytical chemistry (journal) , shape memory alloy , electrical resistance and conductance , ternary alloy , crystallography , thermodynamics , condensed matter physics , metallurgy , composite material , chemistry , electrical engineering , physics , organic chemistry , chromatography , computer science , programming language , engineering , layer (electronics)
A simple layered phase‐change random access memory (PRAM) cell was fabricated using the In 3 Sb 1 Te 2 alloy. The overall resistance value of the reset state was about 70 times larger than that of the set state. The resistance difference between the amorphous and crystalline state was fairly well maintained after 10 2 cycles. Interestingly, the measured current–voltage ( I – V ) curve showed three obvious steps in the crystalline state. By means of high temperature X‐ray diffractometry (HTXRD) and differential scanning calorimetry (DSC) experiments, we confirmed that the current steps originate from successive structural transformations of the In 3 Sb 1 Te 2 ternary alloy. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)