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Atomic structure of the non‐polar GaN( $ \bar 2 $ 110) surface by cross‐sectional scanning tunneling microscopy
Author(s) -
Krüger David,
Kuhr Simon,
Schmidt Thomas,
Hommel Detlef,
Falta Jens
Publication year - 2009
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200903041
Subject(s) - scanning tunneling microscope , bar (unit) , gallium nitride , materials science , crystallography , surface reconstruction , microscopy , polar , surface (topology) , molecular physics , nanotechnology , chemistry , optics , geometry , physics , layer (electronics) , mathematics , astronomy , meteorology
The ( $ \bar 2 $ 110) plane of gallium nitride, exposed by cleaving a GaN single crystal under ultra‐high vacuum conditions, has been atomically resolved for the first time, using cross‐sectional scanning tunneling microscopy. The spatial period length supports a (1 × 1) unit mesh size, i.e., the absence of a reconstruction. The contrast observed in the experimental data is well explained by the atomic arrangement expected for a truncated‐bulk structure. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)