Atomic structure of the non‐polar GaN( $ \bar 2 $ 110) surface by cross‐sectional scanning tunneling microscopy | Zendy

Krüger David | Zendy; Kuhr Simon | Zendy; Schmidt Thomas | Zendy; Hommel Detlef | Zendy; Falta Jens | Zendy

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Atomic structure of the non‐polar GaN( $ \bar 2 $ 110) surface by cross‐sectional scanning tunneling microscopy

Author(s) -

Krüger David,

Kuhr Simon,

Schmidt Thomas,

Hommel Detlef,

Falta Jens

Publication year - 2009

Publication title -

physica status solidi (rrl) – rapid research letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.786

H-Index - 68

eISSN - 1862-6270

pISSN - 1862-6254

DOI - 10.1002/pssr.200903041

Subject(s) - scanning tunneling microscope , bar (unit) , gallium nitride , materials science , crystallography , surface reconstruction , microscopy , polar , surface (topology) , molecular physics , nanotechnology , chemistry , optics , geometry , physics , layer (electronics) , mathematics , astronomy , meteorology

The ( $ \bar 2 $ 110) plane of gallium nitride, exposed by cleaving a GaN single crystal under ultra‐high vacuum conditions, has been atomically resolved for the first time, using cross‐sectional scanning tunneling microscopy. The spatial period length supports a (1 × 1) unit mesh size, i.e., the absence of a reconstruction. The contrast observed in the experimental data is well explained by the atomic arrangement expected for a truncated‐bulk structure. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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