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Epitaxy of m ‐plane ZnO on (112) LaAlO 3 substrate
Author(s) -
Ho YenTeng,
Wang WeiLin,
Peng ChunYen,
Chen WeiChun,
Liang MeiHui,
Tian Jr.Sheng,
Chang Li
Publication year - 2009
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200903009
Subject(s) - epitaxy , electron diffraction , materials science , bar (unit) , substrate (aquarium) , diffraction , transmission electron microscopy , pulsed laser deposition , reflection (computer programming) , reflection high energy electron diffraction , crystallography , optoelectronics , optics , thin film , nanotechnology , chemistry , physics , layer (electronics) , oceanography , geology , meteorology , computer science , programming language
Heteroepitaxial growth of non‐polar m ‐plane (10 $ \bar 1 $ 0) ZnO has been demonstrated on (112) LaAlO 3 single crystal substrates using the pulsed laser deposition method. X‐ray diffraction, reflection high energy electron diffraction, and cross‐sectional transmission electron microscopy with selected‐area diffraction, have been used to characterize the structural properties of deposited ZnO films. The epitaxial relationship between ZnO and LAO is shown to be (10 $ \bar 1 $ 0) ZnO ∥ (112) LAO , (11 $ \bar 2 $ 0) ZnO ∥ ( $ \bar 1 $ $ \bar 1 $ 1) LAO and [0001] ZnO ∥ [ $ \bar 1 $ 10] LAO . (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)