Cover Picture: phys. stat. sol. (RRL) 2/1

In the Rapid Research Letter on p. 4ff. Mathias Schindler et al. report on a single‐step passivation process of a CMOS sensor surface for bioelectronic applications. The authors describe an atomic layer deposition protocol of an aluminium oxide/hafnium oxide multilayer, which can be directly applied to the top aluminium of a CMOS process. The just 50 nm thin, smooth multilayers showed high permittivity and low leakage currents in electrolyte solutions. Layers were fabricated at low process temperatures of just 250 °C. It was also proven that the material stack is not toxic to cells. The cover picture shows a neuron grown on the input sensor structure of a CMOS chip, which was passivated by the material stack.