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Cover Picture: phys. stat. sol. (RRL) 2/1
Publication year - 2008
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200890000
Subject(s) - cover (algebra) , passivation , cmos , computer science , optoelectronics , electrical engineering , nanotechnology , physics , materials science , layer (electronics) , engineering , mechanical engineering
In the Rapid Research Letter on p. 4ff. Mathias Schindler et al. report on a single‐step passivation process of a CMOS sensor surface for bioelectronic applications. The authors describe an atomic layer deposition protocol of an aluminium oxide/hafnium oxide multilayer, which can be directly applied to the top aluminium of a CMOS process. The just 50 nm thin, smooth multilayers showed high permittivity and low leakage currents in electrolyte solutions. Layers were fabricated at low process temperatures of just 250 °C. It was also proven that the material stack is not toxic to cells. The cover picture shows a neuron grown on the input sensor structure of a CMOS chip, which was passivated by the material stack.