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ZnO quantum dots embedded in a SiO 2 nanoparticle layer grown by atomic layer deposition
Author(s) -
Wu M. K.,
Shih Y. T.,
Chen M. J.,
Yang J. R.,
Shiojiri M.
Publication year - 2009
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200802281
Subject(s) - quantum dot , atomic layer deposition , materials science , photoluminescence , nanoparticle , amorphous solid , optoelectronics , layer (electronics) , annealing (glass) , nanotechnology , silicon , deposition (geology) , fabrication , chemistry , composite material , crystallography , medicine , alternative medicine , pathology , sediment , biology , paleontology
We have fabricated ZnO quantum dots embedded in an amorphous silicon oxide layer by atomic layer deposition (ALD). SiO 2 nanoparticles with diameters of approximately 10 nm dispersed in isopropyl alcohol solution were spin‐on coated on the Si substrate and dried in an oven. Subsequently, ALD of ZnO was performed using two precursors, Zn(C 2 H 5 ) 2 and H 2 O, which can infiltrate into the small voids between SiO 2 nanoparticles. It is revealed that the deposited ZnO was uniformly embedded in the SiO 2 layer as crystalline ZnO quantum dots with diameters in the range of about 3–8 nm after a high‐temperature post‐deposition annealing treatment. The quantum confinement effect of the ZnO dots is well manifested by a significant blue‐shift of about 80 meV in the photoluminescence spectrum at room temperature. This technique is applicable to a new fabrication route of optoelectronic devices, such as UV light emitting diodes and lasers. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)