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Room temperature growth of semipolar AlN (1 $ \bar 1 $ 02) films on ZnO (1 $ \bar 1 $ 02) substrates by pulsed laser deposition
Author(s) -
Ueno Kohei,
Kobayashi Atsushi,
Ohta Jitsuo,
Fujioka Hiroshi,
Amanai Hidetaka,
Nagao Satoru,
Horie Hideyoshi
Publication year - 2009
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200802263
Subject(s) - wurtzite crystal structure , materials science , bar (unit) , pulsed laser deposition , full width at half maximum , diffraction , optoelectronics , fabrication , deposition (geology) , layer (electronics) , laser , thin film , zinc , optics , nanotechnology , metallurgy , medicine , paleontology , physics , alternative medicine , pathology , sediment , meteorology , biology
Semipolar AlN $(1 \bar 102) $ films have been prepared on ZnO $(1 \bar 102) $ substrates by employing room temperature (RT) grown AlN layers using pulsed laser deposition. The use of the RT‐AlN layer suppresses the interfacial reactions between AlN and ZnO and makes it possible to take full advantage of the nearly lattice matched wurtzite substrates. The FWHM values of XRCs of semipolar AlN $(1 \bar 102) $ films were 1180 arcsec and 1620 arcsec for symmetric $1 \bar 102 $ diffraction and in‐plane $11\bar 20 $ diffraction, respectively. These results indicate that the use of the RT‐AlN layers and the ZnO substrates would be quite attractive for fabrication of high efficiency UV light emitting devices. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)