Premium
How to make single small holes with large aspect ratios
Author(s) -
Föll Helmut,
Gerngroß MarkDaniel,
Cojocaru Ala,
Leisner Malte,
Bahr Jörg,
Carstensen Jürgen
Publication year - 2009
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200802257
Subject(s) - masking (illustration) , aspect ratio (aeronautics) , galvanic cell , etching (microfabrication) , nanotechnology , materials science , process (computing) , semiconductor , proof of concept , optoelectronics , engineering physics , computer science , physics , metallurgy , art , layer (electronics) , visual arts , operating system
In many areas of research a need for single small holes with diameters from a few nm to several μm and large aspect ratios exists that is hard to meet with existing technologies. In a proof of principle it is shown that suitable single holes or specific arrays of some single holes can be made by first etching a very large number of small and deep holes or pores into semiconductors like Si or InP by established electrochemical means, followed by masking the desired holes and filling all others with, e.g., a metal in a galvanic process. The potential and limitations of this technique is briefly discussed. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)