Premium
Atomic simulation of the 30° partial dislocation interaction with divacancy in silicon
Author(s) -
Wang Chaoying,
Meng Qingyuan
Publication year - 2009
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200802254
Subject(s) - dislocation , partial dislocations , silicon , materials science , shear stress , condensed matter physics , crystallography , molecular dynamics , stress (linguistics) , peierls stress , shear (geology) , critical resolved shear stress , dislocation creep , chemistry , physics , composite material , metallurgy , computational chemistry , shear rate , viscosity , linguistics , philosophy
The interactions of the 30° partial dislocation with a divacancy (V 2 ) in silicon are investigated by the molecular dynamics simulation method. The results under different temperature and shear stress conditions show that the 30° partial dislocation is pinned when the dislocation encounters V 2 . When the shear stress approaches a critical value τ c , the dislocation can overcome the pin. As the temperature increases, τ c decreases approximately as a linear function. Moreover, it is found that τ c is mainly determined by the migration barrier of the corresponding kink. Finally, V 2 can make the 30° partial dislocation move faster once the dislocation overcomes the pin. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)