Atomic simulation of the 30° partial dislocation interaction with divacancy in silicon

The interactions of the 30° partial dislocation with a divacancy (V 2 ) in silicon are investigated by the molecular dynamics simulation method. The results under different temperature and shear stress conditions show that the 30° partial dislocation is pinned when the dislocation encounters V 2 . When the shear stress approaches a critical value τ c , the dislocation can overcome the pin. As the temperature increases, τ c decreases approximately as a linear function. Moreover, it is found that τ c is mainly determined by the migration barrier of the corresponding kink. Finally, V 2 can make the 30° partial dislocation move faster once the dislocation overcomes the pin. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)