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The effect of nitrogen incorporation on surface properties of silicon oxynitride films
Author(s) -
Hong Jongin,
Kim Yunseok,
Paik Hanjong,
No Kwangsoo,
Lukes Jennifer R.
Publication year - 2009
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.200802234
Subject(s) - silicon oxynitride , wetting , plasma enhanced chemical vapor deposition , silicon , surface energy , contact angle , materials science , nanoscopic scale , kelvin probe force microscope , fourier transform infrared spectroscopy , chemical vapor deposition , nitrogen , analytical chemistry (journal) , nanotechnology , chemical engineering , chemistry , atomic force microscopy , optoelectronics , silicon nitride , composite material , organic chemistry , engineering
In order to investigate the surface heterogeneity of silicon oxynitride films, we observed the nanoscale variation of the surface potential by Kelvin probe force microscopy (KFM), the molecular bonding characteristics by Fourier transform infrared spectrometry (FTIR), and the wetting behavior by contact angle measurement. Nitrogen incorporation into silicon oxynitride films influenced the decrease in the surface potential and the polar component of the surface free energy. We present the first correlation between the nanoscale measurement of the surface potential and the macroscopic measurement of the surface free energy in silicon oxynitride films grown by a standard plasma‐enhanced chemical vapor deposition (PECVD) technique. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)